Inkjet-Printed High-Yield, Reconfigurable, and Recyclable Memristors on Paper (2312.16501v1)

Abstract: Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive manufacturing on sustainable substrates offers unique advantages for future electronics, including low environmental impact. Here, exploiting structure-property relationship of MoS2 nanoflake-based resistive layer, we present paper-based, inkjet-printed, reconfigurable memristors. With >90% yield from a 16x65 device array, our memristors demonstrate robust resistive switching, with $>10^5$ ON-OFF ratio and <0.5 V operation in non-volatile state. Through modulation of compliance current, the devices transition into volatile state, with only 50 pW switching power consumption, rivalling state-of-the-art metal oxide-based counterparts. We show device recyclability and stable, reconfigurable operation following disassembly, material collection and re-fabrication. We further demonstrate synaptic plasticity and neuronal leaky integrate-and-fire functionality, with disposable applications in smart packaging and simulated medical image diagnostics. Our work shows a sustainable pathway towards printable, high-yield, reconfigurable neuromorphic devices, with minimal environmental footprint.